Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 80.0 A
Technical parameters/input capacitance: 4.10 nF
Technical parameters/gate charge: 118 nC
Technical parameters/drain source voltage (Vds): 60.0 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: D2PAK
External dimensions/packaging: D2PAK
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NP80N055PDG-E2B-AY
|
Renesas Electronics | 功能相似 | D2PAK |
MOS场效应 MOS FIELD EFFECT TRANSISTOR
|
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