Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 360 mW
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/breakdown voltage of gate source: 25.0 V
Technical parameters/Continuous drain current (Ids): 10.0 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 25 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3819-E3
|
Vishay Intertechnology | 功能相似 | TO-92 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, P-Channel, Junction FET, TO-226AA, TO-92, 3 PIN
|
||
2N3819L-E3
|
Vishay Intertechnology | 功能相似 | TO-92 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA, TO-92, 3 PIN
|
||
2N3819LEADFREE
|
Central Semiconductor | 功能相似 | TO-92 |
Trans JFET N-CH 25V 3-Pin TO-92
|
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