Technical parameters/forward voltage: 1 V
Technical parameters/reverse recovery time: 4 ns
Technical parameters/Maximum reverse voltage (Vrrm): 75V
Technical parameters/forward current: 0.2 A
Technical parameters/maximum reverse leakage current (Ir): 5uA
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Minimum Packaging: 10000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N914A
|
ROHM Semiconductor | 功能相似 | DO-35 |
Diode Silicon Small Signal 100prv 200mA Do-35 Case Vf=11 @ 20mA
|
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1N914A
|
Philips | 功能相似 |
Diode Silicon Small Signal 100prv 200mA Do-35 Case Vf=11 @ 20mA
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1N914A
|
EIC | 功能相似 | DO-35 |
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|
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1N914A
|
Diodes | 功能相似 |
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1N914A
|
Freescale | 功能相似 |
Diode Silicon Small Signal 100prv 200mA Do-35 Case Vf=11 @ 20mA
|
|||
1N914A
|
NTE Electronics | 功能相似 |
Diode Silicon Small Signal 100prv 200mA Do-35 Case Vf=11 @ 20mA
|
|||
1N914A
|
Semtech Corporation | 功能相似 | DO-35 |
Diode Silicon Small Signal 100prv 200mA Do-35 Case Vf=11 @ 20mA
|
||
1N914ATR
|
Fairchild | 功能相似 | DO-35 |
DIODE 0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
||
1N914ATR
|
NXP | 功能相似 | DO-35 |
DIODE 0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
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