Technical parameters/clamp voltage: 33.3 V
Technical parameters/Maximum reverse voltage (Vrrm): 18.2V
Technical parameters/test current: 50 mA
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 22.8 V
Technical parameters/breakdown voltage: 22.8 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -55℃ ~ 175℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: G-MELF
External dimensions/packaging: G-MELF
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 完全替代 | SQ-MELF |
t Dap Bi 1500W Sm
|
||
|
|
Microsemi | 类似代替 | SQ-MELF |
G-MELF 18.2V 1500W
|
||
JANS1N6151AUS
|
Semtech Corporation | 完全替代 | SMT |
ESD 抑制器/TVS 二极管 TVS BI 1500W SM 18.2V
|
||
JANTX1N6151AUS
|
Semtech Corporation | 完全替代 | SMT |
Diode TVS Single Bi-Dir 18.2V 1.5kW 2Pin G-MELF
|
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