Technical parameters/clamp voltage: 64.6 V
Technical parameters/test current: 25 mA
Technical parameters/peak pulse power: 500 W
Technical parameters/minimum reverse breakdown voltage: 44.7 V
Technical parameters/breakdown voltage: 44.7 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: E-MELF
External dimensions/packaging: E-MELF
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N6122AUS
|
Microsemi | 类似代替 | E-MELF |
Diode TVS Single Bi-Dir 35.8V 500W 2Pin E-MELF
|
||
1N6122AUS
|
Semtech Corporation | 类似代替 | SMD |
Diode TVS Single Bi-Dir 35.8V 500W 2Pin E-MELF
|
||
JANTXV1N6122AUS
|
Microsemi | 类似代替 | E-MELF |
Diode TVS Single Bi-Dir 35.8V 500W 2Pin E-MELF
|
||
JANTXV1N6122AUS
|
Sensitron Semiconductor | 类似代替 | MELF |
Diode TVS Single Bi-Dir 35.8V 500W 2Pin E-MELF
|
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