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Model 2SC3646S-TD-E
Description NPN Transistor, maximum 1A, On Semiconductor # # # standard Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### Bipolar transistors, various bipolar transistors from On Semiconductor, including the following categories: small signal transistors, general-purpose transistors, dual NPN and PNP transistors, power transistors, high-voltage transistors, RF bipolar transistors, low-noise, dual matched, and complex bipolar transistors
Product QR code
Brand: ON Semiconductor
Packaging TO-243
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.31  yuan 1.31yuan
5+:
$ 1.7618
25+:
$ 1.6313
50+:
$ 1.5399
100+:
$ 1.5008
500+:
$ 1.4747
2500+:
$ 1.4420
5000+:
$ 1.4290
10000+:
$ 1.4094
Quantity
5+
25+
50+
100+
500+
Price
$1.7618
$1.6313
$1.5399
$1.5008
$1.4747
Price $ 1.7618 $ 1.6313 $ 1.5399 $ 1.5008 $ 1.4747
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2156) Minimum order quantity(5)
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Technical parameters/frequency: 120 MHz

Technical parameters/number of pins: 3

Technical parameters/polarity: N-Channel, NPN

Technical parameters/dissipated power: 0.5 W

Technical parameters/breakdown voltage (collector emitter): 100 V

Technical parameters/maximum allowable collector current: 1A

Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 5V

Technical parameters/Maximum current amplification factor (hFE): 280

Technical parameters/rated power (Max): 500 mW

Technical parameters/DC current gain (hFE): 140

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 500 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: TO-243

External dimensions/length: 4.5 mm

External dimensions/width: 2.5 mm

External dimensions/height: 1.5 mm

External dimensions/packaging: TO-243

Physical parameters/materials: Silicon

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2SC3646S 2SC3646S ON Semiconductor 功能相似 SOT-89
SOT-89 NPN 100V 1A
PDF
2SC3646S-TD-E 2SC3646S-TD-E Sanyo Semiconductor 功能相似
NPN 晶体管，最大 1A，On Semiconductor ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
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2SC3646S-TD-E 2SC3646S-TD-E ON Semiconductor 功能相似 TO-243
NPN 晶体管，最大 1A，On Semiconductor ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
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