Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 1.5 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 695 W
Technical parameters/drain source voltage (Vds): 1000 V
Technical parameters/leakage source breakdown voltage: 1000 V
Technical parameters/Continuous drain current (Ids): 10A
Technical parameters/rise time: 36 ns
Technical parameters/Input capacitance (Ciss): 5320pF @25V(Vds)
Technical parameters/descent time: 164 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 695W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFH10N100P
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
TO-247 N-CH 1000V 10A
|
||
IXTH10N100D
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
MOSFET N-CH 1000V 10A TO-247
|
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