Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 1.5V @200mA
Technical parameters/test current: 6.2 mA
Technical parameters/voltage regulation value: 20 V
Technical parameters/forward voltage (Max): 1.5V @200mA
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-204AH
External dimensions/packaging: DO-204AH
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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M/A-Com | 功能相似 |
无铅封装用于表面安装齐纳二极管500mW的 LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
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1N5540B
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Jinan Gude Electronic Device | 功能相似 |
无铅封装用于表面安装齐纳二极管500mW的 LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
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Microsemi | 功能相似 | DO-213AA-2 |
无铅封装用于表面安装齐纳二极管500mW的 LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
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1N5743B
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Microsemi | 功能相似 | DO-35-2 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
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Microchip | 功能相似 | DO-35-2 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
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New Jersey Semiconductor | 功能相似 | 2 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
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