Technical parameters/rated voltage (DC): 33.0 V
Technical parameters/tolerances: ±5 %
Technical parameters/rated power: 500 mW
Technical parameters/forward voltage: 1.2V @200mA
Technical parameters/dissipated power: 500 mW
Technical parameters/test current: 3.8 mA
Technical parameters/voltage regulation value: 33 V
Technical parameters/forward voltage (Max): 1.2V @200mA
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35-2
External dimensions/length: 4.56 mm
External dimensions/width: 1.91 mm
External dimensions/height: 1.91 mm
External dimensions/packaging: DO-35-2
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
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|---|---|---|---|---|---|---|
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FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
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FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
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FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
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CHENG-YI | 完全替代 |
FAIRCHILD SEMICONDUCTOR 1N5257B. 齐纳二极管
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Fairchild | 完全替代 | DO-35-2 |
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