Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 1.1V @200mA
Technical parameters/dissipated power: 480 mW
Technical parameters/test current: 20 mA
Technical parameters/voltage regulation value: 4.3 V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5229B-TAP
|
Vishay Semiconductor | 功能相似 | DO-35-2 |
Diode Zener Single 4.3V 5% 0.5W(1/2W) Automotive 2Pin DO-35 Ammo
|
||
1N5229B-TAP
|
VISHAY | 功能相似 | DO-35 |
Diode Zener Single 4.3V 5% 0.5W(1/2W) Automotive 2Pin DO-35 Ammo
|
||
1N5229B-TR
|
Vishay Small Signal | 功能相似 | DO-35 |
齐纳二极管 500mW,1N52xx 系列,Vishay Semiconductor ### 齐纳二极管,Vishay Semiconductor
|
||
1N5229B-TR
|
LiteOn | 功能相似 | DO-35 |
齐纳二极管 500mW,1N52xx 系列,Vishay Semiconductor ### 齐纳二极管,Vishay Semiconductor
|
||
1N5229B-TR
|
Vishay Semiconductor | 功能相似 | DO-35 |
齐纳二极管 500mW,1N52xx 系列,Vishay Semiconductor ### 齐纳二极管,Vishay Semiconductor
|
||
|
|
Jinan Gude Electronic Device | 功能相似 |
NTE ELECTRONICS 1N968B 齐纳二极管, 20V, 500mW, DO-35
|
|||
1N968B
|
EIC | 功能相似 | DO-35 |
NTE ELECTRONICS 1N968B 齐纳二极管, 20V, 500mW, DO-35
|
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