Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 4.7 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5230B
|
ST Microelectronics | 类似代替 | DO-35 |
1N5230 系列 500 mW 4.7 V 20 mA 通孔 齐纳二极管 - DO-35
|
||
|
|
先科ST | 类似代替 | DO-35 |
1N5230 系列 500 mW 4.7 V 20 mA 通孔 齐纳二极管 - DO-35
|
||
1N5230B
|
Major Brands | 类似代替 | DO-35 |
1N5230 系列 500 mW 4.7 V 20 mA 通孔 齐纳二极管 - DO-35
|
||
1N5230B
|
NTE Electronics | 类似代替 |
1N5230 系列 500 mW 4.7 V 20 mA 通孔 齐纳二极管 - DO-35
|
|||
1N5230B
|
Vishay Semiconductor | 类似代替 | DO-35 |
1N5230 系列 500 mW 4.7 V 20 mA 通孔 齐纳二极管 - DO-35
|
||
1N5230B
|
Motorola | 类似代替 | DO-35-2 |
1N5230 系列 500 mW 4.7 V 20 mA 通孔 齐纳二极管 - DO-35
|
||
1N5230B
|
National Semiconductor | 类似代替 |
1N5230 系列 500 mW 4.7 V 20 mA 通孔 齐纳二极管 - DO-35
|
|||
1N5230B
|
Microsemi | 类似代替 | DO-7 |
1N5230 系列 500 mW 4.7 V 20 mA 通孔 齐纳二极管 - DO-35
|
||
|
1N5230B
|
Freescale | 类似代替 |
1N5230 系列 500 mW 4.7 V 20 mA 通孔 齐纳二极管 - DO-35
|
|||
|
1N5230B
|
Rectron | 类似代替 | DO-204AH |
1N5230 系列 500 mW 4.7 V 20 mA 通孔 齐纳二极管 - DO-35
|
||
|
1N5230B-35B
|
PANJIT Touch Screens | 功能相似 | DO-35 |
Zener Diode, 4.7V V(Z), 5%, 0.5W(1/2W), Silicon, Unidirectional, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2
|
||
1N5230B-TP
|
Micro Commercial Components | 类似代替 | DO-35 |
MICRO COMMERCIAL COMPONENTS 1N5230B-TP 齐纳二极管, 500mW, 4.7V, DO-35
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review