Technical parameters/tolerances: ±5 %
Technical parameters/breakdown voltage: 2.4 V
Technical parameters/number of pins: 2
Technical parameters/forward voltage: 1.1 V
Technical parameters/dissipated power: 500 mW
Technical parameters/thermal resistance: 300K/W (RθJA)
Technical parameters/test current: 20 μA
Technical parameters/forward current: 200 mA
Technical parameters/voltage regulation value: 2.4 V
Technical parameters/forward voltage (Max): 1.1V @200mA
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/working junction temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 0.5 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/length: 3.9 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: DO-35
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N4370A
|
Fairchild | 功能相似 | DO-35-2 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
||
|
|
ON Semiconductor | 功能相似 | DO-35 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
||
|
|
TAK Cheong | 功能相似 | DO-204 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
||
1N4370A
|
Microsemi | 功能相似 | DO-35 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
||
1N4370A
|
Leshan Radio | 功能相似 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
|||
|
|
First Components International | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
|
|
Formosa Technology | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
|
|
Motorola | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5221B
|
ON Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
|
Central Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
|
Freescale | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
1N5221B
|
ST Microelectronics | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
|
ETC | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
1N5221B
|
Multicomp | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5221B
|
Panjit | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5221B
|
先科ST | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5221B
|
Microsemi | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5221B 单管二极管 齐纳, 2.4 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5221B-T
|
Vishay Semiconductor | 类似代替 | DO-35 |
Diode Zener Single 2.4V 5% 0.5W(1/2W) 2Pin DO-35 T/R
|
||
1N5221B-T
|
Micro Commercial Components | 类似代替 |
Diode Zener Single 2.4V 5% 0.5W(1/2W) 2Pin DO-35 T/R
|
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