Technical parameters/tolerances: ±5 %
Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 12.8 V
Technical parameters/rated power (Max): 400 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-7
External dimensions/packaging: DO-7
Physical parameters/operating temperature: -55℃ ~ 100℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
New Jersey Semiconductor | 完全替代 |
12.8 VOLT低噪声温度补偿齐纳二极管基准二极管 12.8 VOLT LOW NOISE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
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1N4900A
|
Microchip | 完全替代 | DO-7 |
12.8 VOLT低噪声温度补偿齐纳二极管基准二极管 12.8 VOLT LOW NOISE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
1N4900A
|
Microsemi | 完全替代 | DO-7 |
12.8 VOLT低噪声温度补偿齐纳二极管基准二极管 12.8 VOLT LOW NOISE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
|
|
New Jersey Semiconductor | 完全替代 | 2 |
12.8 VOLT低噪声温度补偿齐纳二极管基准二极管 12.8 VOLT LOW NOISE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
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