Warm reminder: The pictures are for reference only. The actual product may vary
Collection
Description INFINEON IRFB4212PBF Transistor, MOSFET, N-channel, 18 A, 100 V, 72.5 Mohm, 10 V, 5 V
Product QR code
Brand: Infineon
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
3.26  yuan 3.26yuan
5+:
$ 4.4010
25+:
$ 4.0750
50+:
$ 3.8468
100+:
$ 3.7490
500+:
$ 3.6838
2500+:
$ 3.6023
5000+:
$ 3.5697
10000+:
$ 3.5208
Quantity
5+
25+
50+
100+
500+
Price
$4.4010
$4.0750
$3.8468
$3.7490
$3.6838
Price $ 4.4010 $ 4.0750 $ 3.8468 $ 3.7490 $ 3.6838
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(5070) Minimum order quantity(5)
Add to Cart Buy now
Welcome to use ICGOODFIND AI Assistant
Chip AI consultant  Chip AI consultant
Download related files
PDF
  • Disappointment
  • General
  • Satisfied
  • Like
  • Love it so much

Technical parameters/rated power: 60 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.0725 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 60 W

Technical parameters/threshold voltage: 5 V

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Continuous drain current (Ids): 18A

Technical parameters/rise time: 28 ns

Technical parameters/Input capacitance (Ciss): 550pF @50V(Vds)

Technical parameters/rated power (Max): 60 W

Technical parameters/descent time: 3.9 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 60W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.66 mm

External dimensions/width: 4.82 mm

External dimensions/height: 9.02 mm

External dimensions/packaging: TO-220-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Power Management, Push Pull, Class D Audio, Audio, Audio, Full Barrier, Consumer Electronics, Consumer Electronics, Power Management, Consumer Full Barrier

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

Customs information/ECCN code: EAR99

The most helpful review

  Only display evaluations with images

Latest Review

Load more

There is no evaluation yet

Looking forward to your sharing the joy brought by technology

Ask a question
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.

No questions have been asked yet

I'm not very familiar with the product yet. Just ask around

Load more
    No data available for the time being.

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF520NPBF IRF520NPBF Vishay Semiconductor 类似代替 TO-220-3
N 通道功率 MOSFET 8A 至 12A,Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备,采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
PDF
IRF520NPBF IRF520NPBF Arduino 类似代替
N 通道功率 MOSFET 8A 至 12A,Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备,采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
PDF
IRF520NPBF IRF520NPBF International Rectifier 类似代替 TO-220-3
N 通道功率 MOSFET 8A 至 12A,Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备,采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
PDF
IRF540ZPBF IRF540ZPBF International Rectifier 类似代替 TO-220-3
INFINEON IRF540ZPBF 晶体管, MOSFET, 汽车, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
PDF
IRF540ZPBF IRF540ZPBF Infineon 类似代替 TO-220-3
INFINEON IRF540ZPBF 晶体管, MOSFET, 汽车, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
PDF
STP24NF10 STP24NF10 ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP24NF10 晶体管, MOSFET, N沟道, 26 A, 100 V, 0.055 ohm, 10 V, 3 V
PDF

Newly listed products

©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.

Scroll

Comparison

Unfold

pk

Clear