Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 250 @2mA, 4.5V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/width: 4.19 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3391A
|
Fairchild | 类似代替 | TO-226-3 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
|
|
ON Semiconductor | 类似代替 | TO-92 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N3391A
|
National Semiconductor | 类似代替 | TO-92 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N3391A
|
Central Semiconductor | 类似代替 | TO-226-3 |
NPN通用放大器 NPN General Purpose Amplifier
|
||
2N3392
|
Fairchild | 功能相似 | TO-226-3 |
NTE ELECTRONICS 2N3392 Bipolar (BJT) Single Transistor, NPN, 50V, 260mW, 100mA, 400 hFE
|
||
2N3392
|
NTE Electronics | 功能相似 | TO-92 |
NTE ELECTRONICS 2N3392 Bipolar (BJT) Single Transistor, NPN, 50V, 260mW, 100mA, 400 hFE
|
||
2N3392
|
Freescale | 功能相似 | TO-92 |
NTE ELECTRONICS 2N3392 Bipolar (BJT) Single Transistor, NPN, 50V, 260mW, 100mA, 400 hFE
|
||
MPS6521
|
ON Semiconductor | 功能相似 | TO-92-3 |
NPN通用放大器 NPN General Purpose Amplifier
|
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