Technical parameters/forward voltage: 1.4 V
Technical parameters/forward current: 35000 mA
Technical parameters/forward current (Max): 35000 mA
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-5
External dimensions/packaging: DO-5
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/military grade: Yes
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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NJS | 功能相似 | 2 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
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1N1186A
|
International Rectifier | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
||
|
|
ETC2 | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
|||
1N1186A
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
||
|
|
Diotec Semiconductor | 功能相似 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
|||
1N1186A
|
Vishay Semiconductor | 功能相似 | DO-5 |
Rectifier Diode, 1 Phase, 1Element, 40A, 200V V(RRM), Silicon, DO-203AB, DO-203AB, 1Pin
|
||
|
|
Microsemi | 功能相似 | DO-203AB-2 |
军事硅电力整流器 Military Silicon Power Rectifier
|
||
JANTX1N1186
|
Microchip | 功能相似 | DO-203AB-2 |
军事硅电力整流器 Military Silicon Power Rectifier
|
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