Technical parameters/rated power: 22.3 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.8 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 22.3 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 2.4A
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 140pF @100V(Vds)
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 22.3W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Manufacturing Applications: Industrial, Consumer Electronics, Automotive, Communications&Networking, Consumer Electronics, Power Management, Alternative Energy, Automotive, Lighting, Lighting, Power Management, Communication and Networking, Alternative Energy, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPD60R2K0C6ATMA1
|
Infineon | 完全替代 | TO-252-3 |
晶体管, MOSFET, N沟道, 2.4 A, 600 V, 1.8 ohm, 10 V, 3 V
|
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