Technical parameters/drain source voltage (Vds): 20 V
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Catalog: MOS(Field Effect Transistor
Other/leakage source voltage (Vdss): 20V
Other/continuous drain current (Id) (at 25 ° C): 3.4A
Other/gate source threshold voltage: 450mV @ 250uA(Minimum)
Other/leakage source conduction resistance: 100mΩ @ 2.8A,4.5V
Other/maximum power dissipation (Ta=25 ° C): 1.38W
Other/Type: Pchannel
Other/Product Code: C373369
Other/Packaging Specifications: SOT-23
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