Technical parameters/dissipated power: 2.5W (Ta), 190W (Tc)
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Input capacitance (Ciss): 1500pF @30V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 190W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK4209
|
Sanyo Semiconductor | 功能相似 | TO-3 |
Trans MOSFET N-CH 80V 12A 3Pin(3+Tab) TO-3PB
|
||
2SK4209
|
ON Semiconductor | 功能相似 | TO-3-3 |
Trans MOSFET N-CH 80V 12A 3Pin(3+Tab) TO-3PB
|
||
SK420
|
Diotec Semiconductor | 功能相似 | SMC |
12A, 800V, 1.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB, 3 PIN
|
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