Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Technical parameters/Input capacitance (Ciss): 600pF @30V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
ON Semiconductor | 功能相似 | 221AM |
Power Field-Effect Transistor
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