Encapsulation parameters/Encapsulation: SOT-153
External dimensions/packaging: SOT-153
Other/maximum source drain voltage VdsDrain Source Voltage: 50V
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: -50V
Other/Maximum Drain Current IdDrain Current: 6mA~14mA
Other/source drain on resistance RdsDrain Source On State Resistance: -0.2V~-1.5V
Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: 300mW/0.3W
Other/dissipative power PdPower Dissipation: Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications • Including two devices in SM5 • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, Rg = 1 kΩ • High input impedance: IGSS = −1 nA (max) at VGS = −30 V
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
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