Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 2.00 A
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 2.00 A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 230pF @10V(Vds)
Technical parameters/descent time: 60 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/length: 4.5 mm
External dimensions/width: 2.5 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK2103
|
ROHM Semiconductor | 功能相似 | SOT-89 |
2SK2103 N沟道MOSFET 30V 2A SOT-89 marking/标记 KA 低导通电阻/高速开关/宽SOA/低电压驱动
|
||
SK-2
|
Micro Commercial Components | 功能相似 | DO-214AA |
Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
|
SK-2
|
Zentrum Mikroelektronik Dresden | 功能相似 | SOP |
Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review