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Model 2SD1963T100S
Description MPT NPN 20V 3A
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Brand: ROHM Semiconductor
Packaging MPT-3
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5578) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 20.0 V

Technical parameters/rated current: 3.00 A

Technical parameters/polarity: NPN

Technical parameters/breakdown voltage (collector emitter): 20 V

Technical parameters/maximum allowable collector current: 3A

Technical parameters/minimum current amplification factor (hFE): 270 @500mA, 2V

Technical parameters/rated power (Max): 2 W

Technical parameters/dissipated power (Max): 2 W

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: MPT-3

External dimensions/packaging: MPT-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2SD1963 2SD1963 Kexin 类似代替
2SD1963 NPN三极管 50V 3A 150MHz 120~270 250mV/0.25V SOT-89/SC-62/MPT3 marking/标记 DGQ 功率晶体管
PDF
2SD1963T100Q 2SD1963T100Q ROHM Semiconductor 功能相似 SC-62-3
Bipolar Transistors - BJT TRANS GP BJT NPN 20V 3A 4Pin

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