Technical parameters/frequency: 400 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: N-Channel, NPN
Technical parameters/dissipated power: 1.3 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 200 @500mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 560
Technical parameters/rated power (Max): 1.3 W
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-243
External dimensions/length: 4.5 mm
External dimensions/width: 2.5 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: TO-243
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SC55
|
ROHM Semiconductor | 功能相似 | SC-75 |
Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ULTRA SMALL, PCP, 3 PIN
|
||
SC55
|
Sanyo Semiconductor | 功能相似 |
Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ULTRA SMALL, PCP, 3 PIN
|
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