Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 3.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 15000 mW
Technical parameters/gain bandwidth product: 90 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 82 @500mA, 3V
Technical parameters/Maximum current amplification factor (hFE): 82 @0.5A, 3V
Technical parameters/rated power (Max): 15 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 5.5 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD1760TLR
|
ROHM Semiconductor | 类似代替 | TO-252-3 |
功率晶体管( 50V , 3A ) Power Transistor (50V, 3A)
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review