Technical parameters/frequency: 320 MHz
Technical parameters/rated power: 0.5 W
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 500 mW
Technical parameters/gain bandwidth product: 320 MHz
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 200 @100mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 500 @100mA, 2V
Technical parameters/rated power (Max): 500 mW
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SC-62-3
External dimensions/packaging: SC-62-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD2662T100
|
ROHM Semiconductor | 功能相似 | SOT-89 |
ROHM 2SD2662T100 单晶体管 双极, 高速, NPN, 30 V, 330 MHz, 500 mW, 1.5 A, 270 hFE
|
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