Technical parameters/dissipated power: 125 mW
Technical parameters/breakdown voltage (collector emitter): 10 V
Technical parameters/gain: 12 dB
Technical parameters/minimum current amplification factor (hFE): 80 @7mA, 3V
Technical parameters/rated power (Max): 125 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 125 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: Ultra-Super-Minimold-3
External dimensions/length: 1.6 mm
External dimensions/width: 0.8 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: Ultra-Super-Minimold-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NE68119-T1-A
|
California Eastern Laboratories | 功能相似 | SOT-523 |
Trans RF BJT NPN 10V 0.065A 3Pin Ultra Super Mini-Mold T/R
|
||
|
|
Renesas Electronics | 功能相似 | Mini-Mold |
Trans RF BJT NPN 10V 0.065A 3Pin Ultra Super Mini-Mold T/R
|
||
NE68119-T1-A
|
NEC | 功能相似 | Surface Mount |
Trans RF BJT NPN 10V 0.065A 3Pin Ultra Super Mini-Mold T/R
|
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