Technical parameters/frequency: 30 MHz
Technical parameters/dissipated power: 150 W
Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/minimum current amplification factor (hFE): 55 @1A, 5V
Technical parameters/rated power (Max): 150 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -50 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-264-3
External dimensions/packaging: TO-264-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -50℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC5200RTU
|
ON Semiconductor | 功能相似 | TO-264-3 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
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