Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.3 W
Technical parameters/gain bandwidth product: 250 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 120
Technical parameters/Maximum current amplification factor (hFE): 390
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: SC-72-3
External dimensions/length: 4 mm
External dimensions/width: 2 mm
External dimensions/height: 3 mm
External dimensions/packaging: SC-72-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC1741AS
|
ROHM Semiconductor | 类似代替 | SPT |
中等功率晶体管( 50V , 0.5A ) Medium Power Transistor (50V, 0.5A)
|
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