Technical parameters/halogen-free state: Halogen Free
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 200 @500mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 400
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Suitable for relay drivers, General high-current switching applications, High-speed inverters and converters
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SB1216T-E
|
ON Semiconductor | 完全替代 | TO-251-3 |
双极晶体管 Bipolar Transistor
|
||
2SB1216T-TL-E
|
ON Semiconductor | 类似代替 | TO-252-3 |
双极晶体管 Bipolar Transistor
|
||
2SB1216T-TL-E
|
Sanyo Semiconductor | 类似代替 | TO-252 |
双极晶体管 Bipolar Transistor
|
||
2SB1216T-TL-H
|
ON Semiconductor | 完全替代 | TO-252-3 |
双极晶体管 Bipolar Transistor
|
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