Technical parameters/frequency: 130 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 140 @500mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 280
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SB1203S-TL-E
|
ON Semiconductor | 功能相似 | TO-252-3 |
通用 PNP 晶体管，超过 1A，On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
|
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