Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -150 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.2 W
Technical parameters/gain bandwidth product: 140 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.15A
Technical parameters/minimum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 390
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: SC-72-3
External dimensions/length: 4 mm
External dimensions/width: 2 mm
External dimensions/height: 3 mm
External dimensions/packaging: SC-72-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA933ASTP/QS
|
ROHM Semiconductor | 功能相似 |
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,
|
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2SA933ASTPQ
|
ROHM Semiconductor | 功能相似 | SC-72-3 |
通用晶体管 General Purpose Transistor
|
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