Technical parameters/polarity: PNP
Technical parameters/dissipated power: 100 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 70 @100mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 400
Technical parameters/rated power (Max): 100 mW
Technical parameters/dissipated power (Max): 100 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/packaging: SC-70-3
Physical parameters/operating temperature: 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJX1182OTF
|
Fairchild | 功能相似 | SOT-323-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Epitaxial Sil
|
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