Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 2000mA
Technical parameters/minimum current amplification factor (hFE): 70
Technical parameters/Maximum current amplification factor (hFE): 240
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Other/Minimum Packaging: 2000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA1020
|
Secos | 类似代替 |
一瓦高电流PNP晶体管电压和电流负PNP晶体管 One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS
|
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2SA1020
|
CJ | 类似代替 | TO-92-3 |
一瓦高电流PNP晶体管电压和电流负PNP晶体管 One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS
|
||
2SA1020
|
Luguang Electronic | 类似代替 |
一瓦高电流PNP晶体管电压和电流负PNP晶体管 One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS
|
|||
2SA1020
|
ON Semiconductor | 类似代替 | TO-226-3 |
一瓦高电流PNP晶体管电压和电流负PNP晶体管 One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS
|
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