Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 210 @2mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 340
Technical parameters/rated power (Max): 200 mW
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 类似代替 | MPAK |
2PB709AR PNP三极管 -45V -100mA/-0.1A 70MHz 210~340 -500mV/-0.5V SOT-23/SC-59 marking/标记 BR 开关/放大
|
||
2PB709AR
|
NXP | 类似代替 | MPAK |
2PB709AR PNP三极管 -45V -100mA/-0.1A 70MHz 210~340 -500mV/-0.5V SOT-23/SC-59 marking/标记 BR 开关/放大
|
||
2PB709ARL,215
|
NXP | 功能相似 | SOT-23-3 |
TO-236AB PNP 45V 0.1A
|
||
2PB709ART,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP 2PB709ART,215 单晶体管 双极, PNP, -45 V, 70 MHz, 250 mW, -100 mA, 210 hFE
|
||
2PB709ART,215
|
NXP | 功能相似 | SOT-23-3 |
NXP 2PB709ART,215 单晶体管 双极, PNP, -45 V, 70 MHz, 250 mW, -100 mA, 210 hFE
|
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