Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 210 @2mA, 10V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PB709AR,115
|
NXP | 完全替代 | SOT-23-3 |
MPAK PNP 45V 0.1A
|
||
2PB709ARL,215
|
NXP | 类似代替 | SOT-23-3 |
TO-236AB PNP 45V 0.1A
|
||
2PB709ART,215
|
Nexperia | 完全替代 | SOT-23-3 |
NXP 2PB709ART,215 单晶体管 双极, PNP, -45 V, 70 MHz, 250 mW, -100 mA, 210 hFE
|
||
2PB709ART,215
|
NXP | 完全替代 | SOT-23-3 |
NXP 2PB709ART,215 单晶体管 双极, PNP, -45 V, 70 MHz, 250 mW, -100 mA, 210 hFE
|
||
2SB0709ARL
|
Panasonic | 功能相似 | SOT-23-3 |
PNP硅外延平面型 Silicon PNP epitaxial planar type
|
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