Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 180 @1mA, 6V
Technical parameters/rated power (Max): 200 mW
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PC4081R,115
|
NXP | 类似代替 | SOT-323-3 |
晶体管 双极-射频, NPN, 50 V, 100 MHz, 200 mW, 150 mA, 390 hFE
|
||
2PC4081R,115
|
Nexperia | 类似代替 | SOT-323-3 |
晶体管 双极-射频, NPN, 50 V, 100 MHz, 200 mW, 150 mA, 390 hFE
|
||
2PC4081R,135
|
Nexperia | 完全替代 | SOT-323-3 |
SC-70 NPN 50V 0.15A
|
||
2PC4081R,135
|
NXP | 完全替代 | SOT-323-3 |
SC-70 NPN 50V 0.15A
|
||
2SC4081T106Q
|
ROHM Semiconductor | 功能相似 | SC-70-3 |
ROHM 2SC4081T106Q 单晶体管 双极, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 120 hFE
|
||
2SC4081T106R
|
ROHM Semiconductor | 类似代替 | SOT-323-3 |
ROHM 2SC4081T106R 单晶体管 双极, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 180 hFE
|
||
2SC4081T106S
|
ROHM Semiconductor | 功能相似 | SOT-323-3 |
通用晶体管（ 50V ， 0.15A ） General purpose transistor (50V, 0.15A)
|
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