Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 200 mA
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 400 mW
Technical parameters/threshold voltage: 2.1 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 200 mA
Technical parameters/Input capacitance (Ciss): 50pF @25V(Vds)
Technical parameters/rated power (Max): 400 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 400mW (Ta)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7000
|
Diodes | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
ST Microelectronics | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
TI | 类似代替 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
|||
|
|
Suptertex | 类似代替 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
|||
|
|
Supertex | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
NTE Electronics | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
Calogic | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
InterFET | 类似代替 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
|||
2N7000
|
Major Brands | 类似代替 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
|||
2N7000
|
Diotec Semiconductor | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
UTC | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000
|
National Semiconductor | 类似代替 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
|||
2N7000
|
ON Semiconductor | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N7000 晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
|
||
2N7000TA
|
ON Semiconductor | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N7000TA 晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
|
||
2N7000TA
|
Rochester | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR 2N7000TA 晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
|
||
2N7000TA
|
Calogic | 类似代替 |
FAIRCHILD SEMICONDUCTOR 2N7000TA 晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
|
|||
2N7000TA
|
Samsung | 类似代替 |
FAIRCHILD SEMICONDUCTOR 2N7000TA 晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
|
|||
2N7000TA
|
Fairchild | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N7000TA 晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review