Technical parameters/dissipated power: 200 mW
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 270 @1mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 270 @1mA, 6V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PC4081Q
|
Philips | 功能相似 | SOT-323 |
Trans GP BJT NPN 50V 0.15A 200mW 3Pin SC-70
|
||
2PC4081R,115
|
NXP | 功能相似 | SOT-323-3 |
晶体管 双极-射频, NPN, 50 V, 100 MHz, 200 mW, 150 mA, 390 hFE
|
||
2PC4081R,115
|
Nexperia | 功能相似 | SOT-323-3 |
晶体管 双极-射频, NPN, 50 V, 100 MHz, 200 mW, 150 mA, 390 hFE
|
||
2PC4081S,115
|
Nexperia | 类似代替 | SOT-323-3 |
2PC4081 系列 50 V 150 mA 表面贴装 NPN 通用 晶体管 - SOT-323-3
|
||
2PC4081S,115
|
NXP | 类似代替 | SOT-323-3 |
2PC4081 系列 50 V 150 mA 表面贴装 NPN 通用 晶体管 - SOT-323-3
|
||
2PC4081S,135
|
NXP | 类似代替 | SOT-323-3 |
SC-70 NPN 50V 0.15A
|
||
2PC4081S,135
|
Nexperia | 类似代替 | SOT-323-3 |
SC-70 NPN 50V 0.15A
|
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