Technical parameters/rated power: 0.5 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.6 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 500 mW
Technical parameters/threshold voltage: 2.1 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 0.3A
Technical parameters/rise time: 3.3 ns
Technical parameters/Input capacitance (Ciss): 20pF @25V(Vds)
Technical parameters/rated power (Max): 500 mW
Technical parameters/descent time: 3.1 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Consumer Electronics, Industrial, Motor Drive&Control, Consumer Electronics, Industrial, Motor Drive&Control, Communication&Networking, Power Management, Power Management, Onboard Charger, Communications&Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002K-7
|
Diodes Zetex | 功能相似 | SOT-23 |
2N7002K 系列 60 V 2 Ohm N 沟道 增强模式 Mosfet - SOT-23-3
|
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