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Model 2PA1015Y,126
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) TRANS GP AMMO RADIO
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Brand: NXP
Packaging TO-226-3
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Packaging method Tape & Box (TB)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4899) Minimum order quantity(1)
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Technical parameters/polarity: PNP

Technical parameters/dissipated power: 500 mW

Technical parameters/breakdown voltage (collector emitter): 50 V

Technical parameters/maximum allowable collector current: 0.15A

Technical parameters/minimum current amplification factor (hFE): 120 @2mA, 6V

Technical parameters/Maximum current amplification factor (hFE): 120 @2mA, 6V

Technical parameters/rated power (Max): 500 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/length: 4.8 mm

External dimensions/width: 4.2 mm

External dimensions/height: 5.2 mm

External dimensions/packaging: TO-226-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Box (TB)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
KSA1015YTA KSA1015YTA Fairchild 功能相似 TO-226-3
FAIRCHILD SEMICONDUCTOR KSA1015YTA 单晶体管 双极, PNP, -50 V, 80 MHz, 400 mW, -150 mA, 200 hFE
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