Technical parameters/dissipated power: 75 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 25 @1A, 4V
Technical parameters/rated power (Max): 75 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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ETC | 功能相似 |
t-Npn Si-Gen Pur Amp Sw ; Rohs Compliant: Yes
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NJS | 功能相似 |
t-Npn Si-Gen Pur Amp Sw ; Rohs Compliant: Yes
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2N6488
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Central Semiconductor | 功能相似 | TO-220-3 |
t-Npn Si-Gen Pur Amp Sw ; Rohs Compliant: Yes
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2N6488
|
ST Microelectronics | 功能相似 | SFM |
t-Npn Si-Gen Pur Amp Sw ; Rohs Compliant: Yes
|
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