Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.6 Ω
Technical parameters/dissipated power: 0.2 W
Technical parameters/threshold voltage: 1.76 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 50pF @25V(Vds)
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-523
External dimensions/length: 1.7 mm
External dimensions/width: 0.98 mm
External dimensions/height: 0.78 mm
External dimensions/packaging: SOT-523
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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N 通道功率 MOSFET,60V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
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三极管
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