Technical parameters/dissipated power: 4W (Ta), 150W (Tc)
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/rated power (Max): 4 W
Technical parameters/dissipated power (Max): 4W (Ta), 150W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-254-3
External dimensions/packaging: TO-254-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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2N7227
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Advanced Power Technology | 功能相似 |
N沟道MOSFET N-CHANNEL MOSFET
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2N7227
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Microsemi | 功能相似 | TO-254-3 |
N沟道MOSFET N-CHANNEL MOSFET
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IRFM350
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International Rectifier | 功能相似 | TO-254 |
单 N沟道 400 V 150 W 110 nC 功率Mosfet 法兰安装 - TO-254AA
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IRFM350
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TT Electronics Resistors | 功能相似 |
单 N沟道 400 V 150 W 110 nC 功率Mosfet 法兰安装 - TO-254AA
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JANTX2N7227
|
Microsemi | 类似代替 | TO-254-3 |
每N沟道MOSFET合格MIL -PRF- 592分之19500 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592
|
||
JANTXV2N7227
|
Infineon | 完全替代 | TO-254 |
每N沟道MOSFET合格MIL -PRF- 592分之19500 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592
|
||
JANTXV2N7227U
|
Microsemi | 类似代替 | SMD-267 |
MOSFET N-CH
|
||
JANTXV2N7227U
|
Infineon | 类似代替 |
MOSFET N-CH
|
|||
JANTXV2N7227U
|
International Rectifier | 类似代替 |
MOSFET N-CH
|
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