Technical parameters/drain source resistance: 7.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541900000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7000
|
Diodes | 类似代替 | TO-92-3 |
N沟道 60V 200A
|
||
2N7000
|
ST Microelectronics | 类似代替 | TO-92-3 |
N沟道 60V 200A
|
||
2N7000
|
TI | 类似代替 |
N沟道 60V 200A
|
|||
|
|
Suptertex | 类似代替 |
N沟道 60V 200A
|
|||
|
|
Supertex | 类似代替 | TO-92 |
N沟道 60V 200A
|
||
2N7000
|
NTE Electronics | 类似代替 | TO-92 |
N沟道 60V 200A
|
||
2N7000
|
Calogic | 类似代替 | TO-92 |
N沟道 60V 200A
|
||
2N7000
|
InterFET | 类似代替 |
N沟道 60V 200A
|
|||
2N7000
|
Major Brands | 类似代替 |
N沟道 60V 200A
|
|||
2N7000
|
Diotec Semiconductor | 类似代替 | TO-92 |
N沟道 60V 200A
|
||
2N7000
|
UTC | 类似代替 | TO-92 |
N沟道 60V 200A
|
||
2N7000
|
National Semiconductor | 类似代替 |
N沟道 60V 200A
|
|||
2N7000
|
ON Semiconductor | 类似代替 | TO-92-3 |
N沟道 60V 200A
|
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