Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 280 mW
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 0.31A
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 24.5pF @20V(Vds)
Technical parameters/rated power (Max): 280 mW
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 280 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/length: 2.1 mm
External dimensions/width: 1.24 mm
External dimensions/height: 0.85 mm
External dimensions/packaging: SC-70-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002WT1G
|
ON Semiconductor | 类似代替 | SC-70-3 |
ON SEMICONDUCTOR 2N7002WT1G. 场效应管, MOSFET, N沟道, 60V, 340mA, SC-70, 整卷
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review