Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 280 mA
Technical parameters/drain source resistance: 13.5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 mW
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 280 mA
Technical parameters/Input capacitance (Ciss): 50pF @25V(Vds)
Technical parameters/rated power (Max): 150 mW
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-563
External dimensions/packaging: SOT-563
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002VA
|
ON Semiconductor | 功能相似 | SOT-563 |
N沟道增强型网络场效晶体管 N-Channel Enhancement Mode Field Effect Transistor
|
||
2N7002VA
|
Fairchild | 功能相似 | SOT-523-3 |
N沟道增强型网络场效晶体管 N-Channel Enhancement Mode Field Effect Transistor
|
||
2N7002VA-7
|
Diodes Zetex | 完全替代 | SOT-563 |
复合场效应管 60 280mA SOT-563 代码 KAY 低导通电阻
|
||
2N7002VC-7
|
Diodes Zetex | 功能相似 | SOT-563 |
2N7002VC-7 编带
|
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