Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/maximum source drain voltage Vds Drain Source Voltage: 60V
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 30V
Other/Maximum Drain Current Id Drain Current: 300mA/0.3A
Other/source drain on resistance Ω Rds D Ω/Ohmin Sou Ω/Ohmce On State Ω/Ohmesis: 2.8Ω/Ohm @500mA,10V
Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: 1-2.5V
Other/dissipative power Pd Power Dissipation: 830mW/0.83W
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002K-7
|
Diodes Zetex | 功能相似 | SOT-23 |
2N7002K 系列 60 V 2 Ohm N 沟道 增强模式 Mosfet - SOT-23-3
|
||
2V7002LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
N 通道功率 MOSFET,60V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
||
BSS123-7-F
|
Diodes | 功能相似 | SOT-23-3 |
三极管
|
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