Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 350mW (Ta)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 0.32A
Technical parameters/Input capacitance (Ciss): 24.5pF @20V(Vds)
Technical parameters/rated power (Max): 300 mW
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: DC-DC Converter, Level Shift Circuits, Portable Applications i.e. DSC, PDA, Cell Phone, etc., Low Side Load Switch
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002KT1G
|
Vishay Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR 2N7002KT1G. 场效应管, MOSFET, N沟道, 60V, 380mA SOT-23
|
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