Technical parameters/drain source voltage (Vds): 60 V
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/packaging: SC-70-6
Other/Product Catalog: MOS(Field Effect Transistor
Other/continuous drain current (Id) (at 25 ° C): 115mA
Other/leakage source voltage (Vdss): 60V
Other/gate source threshold voltage: 2.5V @ 250uA
Other/leakage source conduction resistance: 3 Ω @ 500mA,10V
Other/Type: N channel
Other/maximum power dissipation (Ta): 200mW
Other/Product Code: C106992
Other/Packaging Specifications: SC-70-6(SOT-363)
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